ShunCheng、SiC微粉末の空気分級に関する発明特許を取得、技術堀を強化

ShunCheng New Materials Co., Ltd. has achieved another major breakthrough in the field of fine classification technology for silicon carbide micro powder. The company’s invention patent for “An Airflow Classification Device and Method for Silicon Carbide Micro Powder” (Patent No.: ZL 2024 1 0234567.8) was officially authorized by the National Intellectual Property Administration. By innovatively designing the airflow guide structure in the classification chamber, the angle of the classifier wheel blades, and a secondary air intake system, the patent significantly improves particle size concentration and classification yield, especially for the mass production of ultra‑fine SiC micro powder with D50 in the range of 0.5‑8μm.

Traditional SiC micro powder classification suffers from mixing of coarse and fine particles, low yield, and high energy consumption. After two years of research using computational fluid dynamics (CFD) simulation, ShunCheng’s R&D team optimized the internal flow field of the classifier, increasing classification accuracy by 18% and reducing energy consumption per unit product by 10%. This technology has been successfully applied to multiple micro powder production lines, achieving a particle size concentration (D85/D50) of ≤1.4, reaching an internationally leading level.

To date, ShunCheng holds 23 national patents, including 8 invention patents and 15 utility model patents, building a complete intellectual property barrier covering SiC raw material processing, crushing, classification, purification, and surface modification. The head of IP stated that the company will continue to build a patent portfolio around high‑purity SiC (≥99.9%) and spherical SiC powder over the next three years, aiming to file 3‑5 new patent applications annually.

Through continuous innovation and IP protection, ShunCheng aims to strengthen its competitive advantage in the high‑end SiC material market and provide global customers with more stable and efficient product solutions.

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